14:00 | 06.12.2011
DGAP-News: Press Release: Micron
Micron Technology, Inc.
06.12.2011 14:00
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Photo Release — Intel, Micron Extend NAND Flash Technology Leadership With
Introduction of World’s First 128Gb NAND Device and Mass Production of 64Gb
20nm NAND
New 128Gb Device Ideal for Small Form Factor Tablets, Smartphones, SSDs and
High-Performance Compute Devices
News Highlights
— The new 20nm 128Gb MLC NAND device doubles the storage capacity and
performance of the companies’ existing 20nm 64Gb NAND device.
— Intel and Micron continue to lead the industry with the most advanced NAND
production process technology, announcing mass production of their 20nm
64Gb NAND flash.
— The industry’s first monolithic 128Gb part can store 1 terabit of data in a
single fingertip-size package with just eight die–a new storage benchmark
that meets the ongoing demand for slim, sleek products.
— The companies’ 20nm NAND is the first to use an innovative planar cell
structure that overcomes the scaling constraints of standard floating gate
NAND.
SANTA CLARA, Calif. and BOISE, Idaho, 2011-12-06 00:32 CET (GLOBE NEWSWIRE) –
Intel Corporation and Micron Technology, Inc., (Nasdaq:MU) today announced a
new benchmark in NAND flash technology — the world’s first 20 nanometer (nm),
128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced
mass production of their 64Gb 20nm NAND, which further extends the companies’
leadership in NAND process technology.
Photos accompanying this release are available at
http://www.globenewswire.com/newsroom/prs/?pkgid=11182
http://www.globenewswire.com/newsroom/prs/?pkgid=11183
Developed through Intel and Micron’s joint-development venture, IM Flash
Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the
industry to enable a terabit (Tb) of data storage in a fingertip-size package
by using just eight die. It also provides twice the storage capacity and
performance of the companies’ existing 20nm 64Gb NAND device. The 128Gb device
meets the high-speed ONFI 3.0 specification to achieve speeds of 333
megatransfers per second (MT/s), providing customers with a more cost-effective
solid-state storage solution for today’s slim, sleek product designs, including
tablets, smartphones and high-capacity solid-state drives (SSDs.)
‘As portable devices get smaller and sleeker, and server demands increase, our
customers look to Micron for innovative new storage technologies and system
solutions that meet these challenges,’ said Glen Hawk, vice president of
Micron’s NAND Solutions Group. ‘Our collaboration with Intel continues to
deliver leading NAND technologies and expertise that are critical to building
those systems.’
The companies also revealed that the key to their success with 20nm process
technology is due to an innovative new cell structure that enables more
aggressive cell scaling than conventional architectures. Their 20nm NAND uses a
planar cell structure — the first in the industry — to overcome the inherent
difficulties that accompany advanced process technology, enabling performance
and reliability on par with the previous generation. The planar cell structure
successfully breaks the scaling constraints of the standard NAND floating gate
cell by integrating the first Hi-K/metal gate stack on NAND production.
‘It is gratifying to see the continued NAND leadership from the Intel-Micron
joint development with yet more firsts as our manufacturing teams deliver these
high-density, low-cost, compute-quality 20nm NAND devices,’ said Rob Crooke,
Intel vice president and general manager of Intel’s Non-Volatile Memory
Solutions Group. ‘Through the utilization of planar cell structure and
Hi-K/Metal gate stack, IMFT continues to advance the technological capabilities
of our NAND flash memory solutions to enable exciting new products, services
and form factors.’
The demand for high-capacity NAND flash devices is driven by three
interconnected market trends: data storage growth, the shift to the cloud and
the proliferation of portable devices. As digital content continues to grow,
users expect that data to be available across a multitude of devices, all
synchronized via the cloud. To effectively stream data, servers require
high-performance, high-capacity storage that NAND delivers, and storage in
mobile devices has consistently grown with increased access to data.
High-definition video is one example of an application that requires
high-capacity storage, since attempting to stream this type of data can create
a poor user experience. These developments create great opportunities for
high-performance, small-footprint storage, both in the mobile devices that
consume the content and the storage servers that deliver it.
Intel and Micron noted that the December production ramp of their 20nm 64Gb
NAND flash product will enable a rapid transition to the 128Gb device in 2012.
Samples of the 128Gb device will be available in January, closely followed by
mass production in the first half of 2012. Achievement of this milestone will
further enable greater densities and overall fab output, while also helping the
companies’ development teams cultivate the expertise required to design complex
storage solutions and refine future technologies.
About Micron
Micron Technology, Inc. is one of the world’s leading providers of advanced
semiconductor solutions. Through its worldwide operations, Micron manufactures
and markets a full range of DRAM, NAND and NOR flash memory, as well as other
innovative memory technologies, packaging solutions and semiconductor systems
for use in leading-edge computing, consumer, networking, embedded and mobile
products. Micron’s common stock is traded on the NASDAQ under the MU symbol. To
learn more about Micron Technology Inc., visit www.micron.com.
The Micron Technology, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6950
About Intel
Intel (Nasdaq:INTC) is a world leader in computing innovation. The company
designs and builds the essential technologies that serve as the foundation for
the world’s computing devices. Additional information about Intel is available
at newsroom.intel.com and blogs.intel.com.
Intel and the Intel logo are trademarks of Intel Corporation in the United
States and other countries.
* Other names and brands may be claimed as the property of others.
(c)2011 Micron Technology, Inc. and Intel Corporation. All rights reserved.
Information is subject to change without notice. Micron and the Micron logo are
trademarks of Micron Technology, Inc. This news release contains
forward-looking statements regarding the production of the 20nm, 64Gb and 128Gb
NAND devices. Actual events or results may differ materially from those
contained in the forward-looking statements. Please refer to the documents
Micron files on a consolidated basis from time to time with the Securities and
Exchange Commission, specifically Micron’s most recent Form 10-K and Form 10-Q.
These documents contain and identify important factors that could cause the
actual results for Micron on a consolidated basis to differ materially from
those contained in our forward-looking statements (see Certain Factors).
Although we believe that the expectations reflected in the forward-looking
statements are reasonable, we cannot guarantee future results, levels of
activity, performance or achievements.
The photos are also available at Newscom, www.newscom.com, and via AP
PhotoExpress.
CONTACT: Intel:
Deborah Paquin
For Intel
916-984-1921
debpaquin@strategiccom.biz
Dan Snyder
Intel Corporation
408-765-6398
daniel.s.snyder@intel.com
Micron:
Kiesha Cochrane
For Micron
503-471-6822
Kiesha.Cochrane@edelman.com
Dan Francisco
Micron Corporation
208-368-5584
dfrancisco@micron.com
News Source: NASDAQ OMX
06.12.2011 Dissemination of a Corporate News, transmitted by DGAP –
a company of EquityStory AG.
The issuer is solely responsible for the content of this announcement.
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Language: English
Company: Micron Technology, Inc.
United States
Phone:
Fax:
E-mail:
Internet:
ISIN: US5951121038
WKN:
End of Announcement DGAP News-Service
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